(China (Mainland))
Product Summary
The 2SA1797T100Q is a power transistor.
Parametrics
2SA1797T100Q absolute maximum ratings: (1)Collector-base voltage, VCBO: -50v; (2)Collector-emitter voltage, VCEO: -50v; (3)Emitter-base voltage, VEBO: -6v; (4)Collector current, IC: -3 A(dc); -6A(pulse); (5)Collector power dissipation, PC: 0.5w, 2w; (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
2SA1797T100Q features: (1)Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA.; (2)Excellent DC current gain characteristics.; (3)Complements the 2SC4672.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SA1797T100Q |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 3A |
Data Sheet |
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2SA1006 |
Other |
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Data Sheet |
Negotiable |
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2SA1006A |
Other |
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Data Sheet |
Negotiable |
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2SA1006B |
Other |
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Data Sheet |
Negotiable |
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2SA1008 |
Other |
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Data Sheet |
Negotiable |
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2SA1009 |
Other |
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Data Sheet |
Negotiable |
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2SA1009A |
Other |
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Data Sheet |
Negotiable |
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